Abstract: We propose a higher-$\kappa $ non-hysteric ferroelectric field-effect transistor (FEFET) using reversible domain wall displacement. By separately stimulating reversible and irreversible ...
Abstract: The side wall angle is the main parameter to measure the profile of the side wall of trench. In this paper^^81CHBr, SF$_{6} , \mathrm{O}_{2}$, CF 4 are used as the main etching gases, and ...
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