Abstract: An MOS field plate-protected Schottky-drain (gated Schottky-drain) is successfully integrated on a double-channel AlGaN/GaN MOS-HEMT to provide reverse blocking capability. The leakage ...
Abstract: We have developed a double-channel high electron mobility transistor with back barriers for carrier confinement. We have observed that the double-channel devices may suffer from the lack of ...
(CNN) — Earlier this month, after President Donald Trump blasted “60 Minutes” for interviewing Marjorie Taylor Greene, correspondents noticed a change behind the scenes. “Bari Weiss got personally ...
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