The new 9th generation BiCS FLASH™ 512Gb TLC, developed using a 120-layer stacking process based on 5th generation BiCS FLASH™ technology and advanced CMOS technology, exhibits significant performance ...
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SAN JOSE, Calif.--(BUSINESS WIRE)--KIOXIA America, Inc. today announced it has commenced sample shipments 1 of 512Gb Triple-Level Cell (TLC) memory devices incorporating its 9th generation BiCS FLASH™ ...
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