IEEE

A Scalable Physics-Based Compact Model for Terminal Charge, Intrinsic Capacitance and Drain Current in Nanosheet Field Effect Transistors

Abstract: This study introduces a physics-based, SPICE-compatible model for Nanosheet Field-Effect Transistors (NsFETs) that offers explicit expressions for the drain current, terminal charges, and ...

Inside AI server bottleneck: Why Samsung Electro-Mechanics matters — but can’t celebrate yet

In the AI hardware boom, chips get the headlines. But inside every AI server, a quieter part is now driving supply risk and ...

CBSE class 12 physics exam 2026: Expert-backed tips for better scores

The CBSE Class 12 Physics exam is scheduled for February 20, 2026. Experts emphasize understanding concepts, practicing ...
IEEE

Accurate and Efficient Characterization of a High Voltage Capacitor by Fitting Single Discharge Experiments With a Simple Circuit Theory

Abstract: A capacitor is ideally considered as a pure capacitance, but under practical conditions, it also exhibits some resistive and inductive properties, called equivalent series resistance (ESR) ...